to-92mod plastic-encapsulate transistors 2sc2655 transistor (npn) features z low s aturation v oltage: v ce(sat) =0.5v(max)(i c =1a) z high s peed s witching t ime: t stg =1 s(typ.) z complementary to 2sa1020 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 1 a emitter cut-off current i ebo v eb =5v,i c =0 1 a h fe(1) v ce =2v,i c =500ma 70 240 dc current gain h fe(2) v ce =2v,i c =1.5a 40 collector-emitter saturation voltage v ce(sat) i c =1a,i b =0.05a 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b =0.05a 1.2 v transition frequency f t v ce =2v,i c =0.5a 100 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 30 pf tune on time t on 0.15 storage time t stg 2 switch time fall time t f v cc =30v,ic=1a, i b1 =-i b2 =0.05a 0.15 s classification of h fe (1) rank o y range 70-140 120-240 symbol parameter symbol unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current ?continuous 2 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55-150 to-92mod 1.emitter 2.collector 3.base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jul,2012
10 100 10 100 1 10 100 1000 100 1000 0 25 50 75 100 125 150 0 200 400 600 800 1000 1 10 100 1000 10 100 1 10 100 1000 10 100 1000 110 10 100 1000 200 400 600 800 1000 0.1 1 10 100 1000 0123456 0 100 200 300 400 500 600 700 800 200 5 2000 i c f t ?? common emitter v ce =2v t a =25 collector current i c (ma) transition frequency f t (mhz) 2000 2000 =20 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) 2000 2000 t a =100 t a =25 =20 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 500 2sc2655 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v 0.5 30 2000 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) collector current i c (ma) base-emmiter voltage v be (mv) v be ?? i c t a = 2 5 t a = 1 0 0 common emitter v ce =2v static characteristic common emitter t a =25 3.0ma 2.4ma 2.1ma 1.8ma 1.5ma 1.2ma 0.9ma 2.7ma 0.6ma i b =0.3ma collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jul,2012
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